JPH0222544B2 - - Google Patents
Info
- Publication number
- JPH0222544B2 JPH0222544B2 JP55053350A JP5335080A JPH0222544B2 JP H0222544 B2 JPH0222544 B2 JP H0222544B2 JP 55053350 A JP55053350 A JP 55053350A JP 5335080 A JP5335080 A JP 5335080A JP H0222544 B2 JPH0222544 B2 JP H0222544B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- diffusion layer
- conductor pattern
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5335080A JPS56150850A (en) | 1980-04-22 | 1980-04-22 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5335080A JPS56150850A (en) | 1980-04-22 | 1980-04-22 | Manufacture of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56150850A JPS56150850A (en) | 1981-11-21 |
JPH0222544B2 true JPH0222544B2 (en]) | 1990-05-18 |
Family
ID=12940322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5335080A Granted JPS56150850A (en) | 1980-04-22 | 1980-04-22 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56150850A (en]) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69232348T2 (de) * | 1991-09-24 | 2002-08-14 | Matsushita Electric Industrial Co., Ltd. | Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52117579A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
JPS53142196A (en) * | 1977-05-18 | 1978-12-11 | Hitachi Ltd | Bipolar type semiconductor device |
-
1980
- 1980-04-22 JP JP5335080A patent/JPS56150850A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS56150850A (en) | 1981-11-21 |
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